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| NTF3055-100 Preferred Device Power MOSFET 3.0 Amps, 60 Volts N-Channel SOT-223 Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features http://onsemi.com 3.0 A, 60 V RDS(on) = 110 mW N-Channel D * Pb-Free Packages are Available Applications * * * * Power Supplies Converters Power Motor Controls Bridge Circuits G S MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating Drain-to-Source Voltage Drain-to-Gate Voltage (RGS = 10 MW) Gate-to-Source Voltage - Continuous - Non-repetitive (tp 10 ms) Drain Current - Continuous @ TA = 25C - Continuous @ TA = 100C - Single Pulse (tp 10 ms) Total Power Dissipation @ TA = 25C (Note 1) Total Power Dissipation @ TA = 25C (Note 2) Derate above 25C Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy - Starting TJ = 25C (VDD = 25 Vdc, VGS = 10 Vdc, IL(pk) = 7.0 Apk, L = 3.0 mH, VDS = 60 Vdc) Thermal Resistance - Junction-to-Ambient (Note 1) - Junction-to-Ambient (Note 2) Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds Symbol VDSS VDGR VGS Value 60 60 20 30 3.0 1.4 9.0 2.1 1.3 0.014 -55 to 175 74 Unit Vdc Vdc Vdc Vpk Adc Apk W W W/C C mJ 1 2 3 4 MARKING DIAGRAM & PIN ASSIGNMENT Drain 4 SOT-223 CASE 318E STYLE 3 1 Gate IDM PD ID ID AWW 3055 G G 2 3 Drain Source TJ, Tstg EAS A = Assembly Location WW = Work Week 3055 = Specific Device Code G = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package SOT-223 Shipping 1000/Tape & Reel RqJA RqJA TL 72.3 114 260 C/W NTF3055-100T1 NTF3055-100T1G SOT-223 1000/Tape & Reel (Pb-Free) SOT-223 SOT-223 (Pb-Free) 4000/Tape & Reel 4000/Tape & Reel 4000/Tape & Reel C NTF3055-100T3 NTF3055-100T3G Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. When surface mounted to an FR4 board using 1 pad size, 1 oz. (Cu. Area 1.127 sq in). 2. When surface mounted to an FR4 board using minimum recommended pad size, 2-2.4 oz. (Cu. Area 0.272 sq in). NTF3055-100T3LF SOT-223 For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. (c) Semiconductor Components Industries, LLC, 2006 February, 2006 - Rev. 3 1 Publication Order Number: NTF3055-100/D NTF3055-100 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (Note 3) (VGS = 0 Vdc, ID = 250 mAdc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = 60 Vdc, VGS = 0 Vdc) (VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150C) Gate-Body Leakage Current (VGS = 20 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS (Note 3) Gate Threshold Voltage (Note 3) (VDS = VGS, ID = 250 mAdc) Threshold Temperature Coefficient (Negative) Static Drain-to-Source On-Resistance (Note 3) (VGS = 10 Vdc, ID = 1.5 Adc) Static Drain-to-Source On-Resistance (Note 3) (VGS = 10 Vdc, ID = 3.0 Adc) (VGS = 10 Vdc, ID = 1.5 Adc, TJ = 150C) Forward Transconductance (Note 3) (VDS = 8.0 Vdc, ID = 1.7 Adc) VGS(th) 2.0 - - - - 3.0 6.6 88 0.27 0.24 3.2 4.0 - 110 0.40 - - Vdc mV/C mW Vdc V(BR)DSS 60 - - - - 68 66 - - - - - 1.0 10 100 Vdc mV/C mAdc Symbol Min Typ Max Unit IDSS IGSS nAdc RDS(on) VDS(on) gfs Mhos DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance (VDS = 25 Vdc, VGS = 0 V, f = 1.0 MHz) Ciss Coss Crss td(on) (VDD = 30 Vdc, ID = 3.0 Adc, VGS = 10 Vdc, RG = 9.1 W) (Note 3) tr td(off) tf QT (VDS = 48 Vdc, ID = 3.0 Adc, VGS = 10 Vdc) (Note 3) Q1 Q2 - - - 324 35 110 455 50 155 pF SWITCHING CHARACTERISTICS (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge - - - - - - - 9.4 14 21 13 10.6 1.9 4.2 20 30 45 30 22 - - nC ns SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage (IS = 3.0 Adc, VGS = 0 Vdc) (IS = 3.0 Adc, VGS = 0 Vdc, TJ = 150C) (Note 3) VSD - - - - - - 0.89 0.74 30 22 8.6 0.04 1.0 - - - - - mC Vdc Reverse Recovery Time (IS = 3.0 Adc, VGS = 0 Vdc, dIS/dt = 100 A/ms) (Note 3) Reverse Recovery Stored Charge 3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. 4. Switching characteristics are independent of operating junction temperatures. trr ta tb QRR ns http://onsemi.com 2 NTF3055-100 6 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) 5 4 3 2 1 0 VGS = 6 V VGS = 8 V VGS = 4.5 V VGS = 10 V VGS = 5 V 6 VDS 10 V 5 4 3 2 1 0 TJ = 25C TJ = 100C TJ = -55C 3 3.5 4 4.5 5 5.5 6 VGS = 4 V 3 4 0 1 2 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) Figure 2. Transfer Characteristics 0.16 0.14 0.12 0.1 0.08 0.06 0.04 0.02 0 0 VGS = 10 V TJ = 100C 0.16 0.14 0.12 0.1 0.08 0.06 0.04 0.02 0 0 VGS = 15 V TJ = 100C TJ = 25C TJ = -55C TJ = 25C TJ = -55C 1 2 3 4 5 6 1 2 3 4 5 6 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) Figure 3. On-Resistance versus Gate-to-Source Voltage 1000 ID = 1.5 A VGS = 10 V IDSS, LEAKAGE (nA) Figure 4. On-Resistance versus Drain Current and Gate Voltage 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0.6 -50 VGS = 0 V TJ = 150C 100 TJ = 125C 10 TJ = 100C -25 0 25 50 75 100 125 150 175 1 0 10 20 30 40 50 60 TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current versus Voltage http://onsemi.com 3 NTF3055-100 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 800 700 C, CAPACITANCE (pF) 600 500 400 300 200 100 0 10 5 VGS 0 VDS 5 Crss Coss Crss Ciss 12 10 8 6 4 2 0 0 ID = 3 A TJ = 25C 2 4 6 8 10 12 Q1 QT VGS VDS = 0 V Ciss VGS = 0 V TJ = 25C Q2 10 15 20 25 GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation 100 VDS = 30 V ID = 3 A VGS = 10 V td(off) 3 IS, SOURCE CURRENT (AMPS) tf Figure 8. Gate-to-Source and Drain-to-Source Voltage versus Total Charge VGS = 0 V TJ = 25C 2 t, TIME (ns) tr td(on) 10 1 1 1 10 RG, GATE RESISTANCE (W) 100 0 0.54 0.58 0.62 0.66 0.7 0.74 0.78 0.82 0.86 0.9 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Figure 9. Resistive Switching Time Variation versus Gate Resistance 100 ID, DRAIN CURRENT (AMPS) EAS, SINGLE PULSE DRAIN-TO-SOURCE AVALANCHE ENERGY (mJ) VGS = 20 V SINGLE PULSE TC = 25C 80 70 60 50 40 30 20 10 0 Figure 10. Diode Forward Voltage versus Current ID = 7 A 10 1 10 ms 0.1 RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 1 1 ms 100 ms dc 10 100 0.01 0.1 25 50 75 100 125 150 175 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) TJ, STARTING JUNCTION TEMPERATURE (C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy versus Starting Junction Temperature http://onsemi.com 4 NTF3055-100 10 r(t), EFFECTIVE TRANSIENT THERMAL RESPONSE RESISTANCE (NORMALIZED) 1 x 1 inch 1 oz. Cu Pad (3 x 3 inch FR4) 1 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 t, TIME (s) 1 10 100 1000 Figure 13. Thermal Response http://onsemi.com 5 NTF3055-100 PACKAGE DIMENSIONS SOT-223 (TO-261) CASE 318E-04 ISSUE L D b1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. MILLIMETERS NOM MAX 1.63 1.75 0.06 0.10 0.75 0.89 3.06 3.20 0.29 0.35 6.50 6.70 3.50 3.70 2.30 2.40 0.94 1.05 1.75 2.00 7.00 7.30 10 - INCHES NOM 0.064 0.002 0.030 0.121 0.012 0.256 0.138 0.091 0.037 0.069 0.276 - 4 HE 1 2 3 E e1 b e A q L1 C DIM A A1 b b1 c D E e e1 L1 HE STYLE 3: PIN 1. 2. 3. 4. q MIN 1.50 0.02 0.60 2.90 0.24 6.30 3.30 2.20 0.85 1.50 6.70 0 MIN 0.060 0.001 0.024 0.115 0.009 0.249 0.130 0.087 0.033 0.060 0.264 0 MAX 0.068 0.004 0.035 0.126 0.014 0.263 0.145 0.094 0.041 0.078 0.287 10 0.08 (0003) A1 GATE DRAIN SOURCE DRAIN SOLDERING FOOTPRINT* 3.8 0.15 2.0 0.079 2.3 0.091 2.3 0.091 6.3 0.248 2.0 0.079 1.5 0.059 mm inches SCALE 6:1 *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 6 NTF3055-100/D |
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